April 28, 2022
Virtual
ABSTRACT:
Many condensed matter systems such as high-Tc superconductors and Mott insulators defy explanation with single-electron models and require accounting for many-body effects. The Hubbard model and extensions of it can capture these effects while still maintaining some degree of simplicity that lends itself to intuition about a particular problem. For systems of finite extent, as their size grows these models become intractable with classical computation. As a means to overcome this computational limitation, I will describe our STM-based fabrication of 3×3 phosphorus dopant arrays embedded in silicon and our efforts in mapping them to an extended Fermi-Hubbard model. In attempting to achieve reasonable quantitative agreement between model and experiment we find that we are limited by the standard implementation of hydrogen depassivation lithography and must advance the technique to enable placement of precisely 1 phosphorus atom at each array site. In light of this, I will discuss our progress in achieving true single-atom precision incorporation, a challenge which must be addressed before it will be possible to use dopant arrays as analog quantum simulators.
Recording for this talk is available here.